Non-Linear Temperature Dependence in Graphene Nanoribbon Tunneling Transistors

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness" (2009). Birck and NCN Publications. Paper 392.

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method" (2014).

On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors

Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)

By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...

Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When...